Invention Grant
- Patent Title: Method of characterising an LED device
- Patent Title (中): 表征LED器件的方法
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Application No.: US13465520Application Date: 2012-05-07
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Publication No.: US09271370B2Publication Date: 2016-02-23
- Inventor: Viet Hoang Nguyen , Pascal Bancken
- Applicant: Viet Hoang Nguyen , Pascal Bancken
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP11165352 20110509
- Main IPC: H05B33/08
- IPC: H05B33/08 ; G01R31/26

Abstract:
A method of characterizing an LED, as well as an integrated circuit using this method, based on a so-called characteristic resistance, in which the LED is operated at a first, relatively low, operating current and then at a second, relatively high, operating current. From the ratio between the difference between the forward voltages at these two operating currents, and the difference between the operating current, the characteristic resistance is determined. The characteristic resistance is measured at two or more moments during the operational lifetime of the device, and a prediction or estimate is made in relation to the total operational lifetime of the devices, from the evolution or change of the characteristic resistance.
Public/Granted literature
- US20120290241A1 METHOD OF CHARACTERISING AN LED DEVICE Public/Granted day:2012-11-15
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