发明授权
- 专利标题： Thin-layer element having an interference layer structure
- 专利标题（中）： 具有干涉层结构的薄层元件
-
申请号： US13395333申请日： 2010-09-10
-
公开(公告)号： US09274258B2公开(公告)日： 2016-03-01
- 发明人: Christian Fuhse , Michael Rahm , Manfred Heim , Ralf Liebler
- 申请人： Christian Fuhse , Michael Rahm , Manfred Heim , Ralf Liebler
- 申请人地址： DE Munich
- 专利权人： Giesecke & Devrient GMBH
- 当前专利权人： Giesecke & Devrient GMBH
- 当前专利权人地址： DE Munich
- 代理机构： Lathrop & Gage LLP
- 优先权： DE102009041583 20090915
- 国际申请： PCT/EP2010/005563 WO 20100910
- 国际公布： WO2011/032665 WO 20110324
- 主分类号： G02B5/28
- IPC分类号： G02B5/28 ; B42D25/29
摘要：
The present invention relates to a thin-film element (30) having an interference layer structure for security papers, value documents and the like, having at least two semitransparent absorber layers (34, 38) and at least one dielectric spacing layer (36) arranged between the at least two absorber layers. According to the present invention, it is provided that the two absorber layers (34, 38) are each formed from a material having a complex refractive index N whose real part n and imaginary part k differ at least in a portion of the visible spectral range by a factor of 5 or more.
公开/授权文献
信息查询
