A memory device includes a memory cell, a sensing circuit connected to sense data stored in a memory cell and to connect the memory cell by first and second paths separate from one another A sample and hold circuit connected between the memory cell and the sensing circuit may separate a period during which voltages of the first and second paths are developed by the data stored in the memory cell from a period during which the sensing circuit senses the data stored in the memory cell by detecting the developed voltages of the first and second paths.