发明授权
US09275731B1 Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
有权
用于增加电阻随机存取存储器（RRAM）的读取灵敏度的系统和方法
- 专利标题： Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
- 专利标题（中）： 用于增加电阻随机存取存储器（RRAM）的读取灵敏度的系统和方法
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申请号： US14044281申请日： 2013-10-02
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公开(公告)号： US09275731B1公开(公告)日： 2016-03-01
- 发明人: Pantas Sutardja , Albert Wu , Runzi Chang , Winston Lee , Peter Lee
- 申请人： Marvell International Ltd.
- 申请人地址： BM Hamilton
- 专利权人： Marvell International Ltd.
- 当前专利权人： Marvell International Ltd.
- 当前专利权人地址： BM Hamilton
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C13/00 ; G06F13/00
摘要：
A resistive random access memory system includes a plurality of bitlines, a plurality of wordlines, and an array of resistive random access memory cells. Each of the resistive random access memory cells in the array includes a transistor and a resistive random access memory element connected in a common gate configuration.
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