发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US12951380申请日: 2010-11-22
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公开(公告)号: US09275837B2公开(公告)日: 2016-03-01
- 发明人: Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
- 申请人: Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2009-265881 20091124
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H05H1/46
摘要:
A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).
公开/授权文献
- US20110126765A1 PLASMA PROCESSING APPARATUS 公开/授权日:2011-06-02
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