Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14326432Application Date: 2014-07-08
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Publication No.: US09275897B2Publication Date: 2016-03-01
- Inventor: Jae Bum Kim
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0095894 20120830
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/768 ; H01L23/48 ; H01L21/48 ; H01L21/265
Abstract:
An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.
Public/Granted literature
- US20140322904A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-10-30
Information query
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