发明授权
US09275908B2 Semiconductor device including gate channel having adjusted threshold voltage
有权
包括具有调节的阈值电压的栅极通道的半导体器
- 专利标题： Semiconductor device including gate channel having adjusted threshold voltage
- 专利标题（中）： 包括具有调节的阈值电压的栅极通道的半导体器
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申请号： US14729105申请日： 2015-06-03
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公开(公告)号： US09275908B2公开(公告)日： 2016-03-01
- 发明人: Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Daniel Morris
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L21/02 ; H01L29/66 ; H01L21/306
摘要：
A semiconductor device includes at least one first semiconductor fin formed on an nFET region of a semiconductor device and at least one second semiconductor fin formed on a pFET region. The at least one first semiconductor fin has an nFET channel region interposed between a pair of nFET source/drain regions. The at least one second semiconductor fin has a pFET channel region interposed between a pair of pFET source/drain regions. The an epitaxial liner is formed on only the pFET channel region of the at least one second semiconductor fin such that a first threshold voltage of the nFET channel region is different than a second threshold voltage of the pFET channel.
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