Invention Grant
- Patent Title: Methods of fabricating semiconductor structures
- Patent Title (中): 制造半导体结构的方法
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Application No.: US13964282Application Date: 2013-08-12
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Publication No.: US09275909B2Publication Date: 2016-03-01
- Inventor: Srikant Jayanti , Fatma Arzum Simsek-Ege , Pavan Kumar Reddy Aella
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8239 ; H01L21/28 ; H01L21/311 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L27/115
Abstract:
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.
Public/Granted literature
- US20150041879A1 SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATION OF SAME Public/Granted day:2015-02-12
Information query
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