An object is to provide a semiconductor device which can store data even after the application of power supply voltage is stopped, a manufacturing method thereof, or a driving method thereof. Data stored in a first circuit portion is transmitted to a second circuit portion, the data is stored in the second circuit portion in a period during which the application of power supply voltage is stopped, and data corresponding to the data is transmitted to the first circuit portion at the time of applying power supply voltage again. With such a configuration, a semiconductor device can store data even in a period during which the application of the power supply voltage is stopped. In particular, the second circuit portion includes a transistor including an oxide semiconductor, whereby the data can be accurately stored.