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US09276113B2 Structure and method to make strained FinFET with improved junction capacitance and low leakage 有权
具有改善的结电容和低泄漏的应变FinFET的结构和方法

Structure and method to make strained FinFET with improved junction capacitance and low leakage
摘要：
A method of forming a semiconductor device that includes forming a gate structure on a fin structure and etching the source and drain region portions of the fin structure to provide a recessed surface. A first semiconductor layer is formed on the recessed surface of the fin structure that is doped to a first conductivity type. A leakage barrier layer is formed on the first semiconductor layer. A second semiconductor layer is formed on the leakage barrier layer. The second semiconductor layer is doped to a second conductivity type.
摘要（中）：

一种形成半导体器件的方法，包括在鳍结构上形成栅极结构并蚀刻鳍结构的源极和漏极区域以提供凹陷表面。 第一半导体层形成在鳍状结构的凹入表面上，该第一半导体层被掺杂到第一导电类型。 在第一半导体层上形成漏电阻层。 在漏电阻层上形成第二半导体层。 第二半导体层被掺杂到第二导电类型。

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