Invention Grant
- Patent Title: Nonvolatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13969912Application Date: 2013-08-19
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Publication No.: US09276132B2Publication Date: 2016-03-01
- Inventor: Woo-Sung Lee , Kyong-Won An
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0108114 20120927
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L27/115
Abstract:
A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure.
Public/Granted literature
- US20140084358A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-03-27
Information query
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