Invention Grant
- Patent Title: Low noise amplifier drain switch circuit
- Patent Title (中): 低噪声放大器漏极开关电路
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Application No.: US14222454Application Date: 2014-03-21
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Publication No.: US09276538B2Publication Date: 2016-03-01
- Inventor: Charles F. Campbell
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US OR Hillsboro
- Assignee: TriQuint Semiconductor, Inc.
- Current Assignee: TriQuint Semiconductor, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F1/14
- IPC: H03F1/14 ; H03F3/72

Abstract:
Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA.
Public/Granted literature
- US20150270817A1 LOW NOISE AMPLIFIER DRAIN SWITCH CIRCUIT Public/Granted day:2015-09-24
Information query
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