Invention Grant
- Patent Title: Electro-optical single crystal element, method for the preparation thereof, and systems employing the same
- Patent Title (中): 电光单晶元件，其制备方法和使用其的体系
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Application No.: US14390522Application Date: 2013-04-04
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Publication No.: US09280006B2Publication Date: 2016-03-08
- Inventor: Pengdi Han , Welling Yan
- Applicant: PENGDI HAN
- Applicant Address: US IL Napierville
- Assignee: PENGDI HAN
- Current Assignee: PENGDI HAN
- Current Assignee Address: US IL Napierville
- Agency: Lackenbach Siegel, LLP
- Agent Andrew F. Young, Esq.
- International Application: PCT/US2013/035343 WO 20130404
- International Announcement: WO2013/152241 WO 20131010
- Main IPC: G02F1/05
- IPC: G02F1/05 ; G02F1/355 ; G02F1/00 ; B29D11/00 ; G02F1/01 ; G02F1/21
Abstract:
The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ytc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.
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Information query
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