发明授权
US09280634B1 Regularization method for quantizing lithography masks 有权
用于量化光刻掩模的正则化方法

  • 专利标题: Regularization method for quantizing lithography masks
  • 专利标题(中): 用于量化光刻掩模的正则化方法
  • 申请号: US14231276
    申请日: 2014-03-31
  • 公开(公告)号: US09280634B1
    公开(公告)日: 2016-03-08
  • 发明人: P. Jeffrey Ungar
  • 申请人: D2S, Inc.
  • 申请人地址: US CA San Jose
  • 专利权人: D2S, Inc.
  • 当前专利权人: D2S, Inc.
  • 当前专利权人地址: US CA San Jose
  • 代理机构: The Mueller Law Office, P.C.
  • 主分类号: G06F17/50
  • IPC分类号: G06F17/50
Regularization method for quantizing lithography masks
摘要:
In an electronic design automation technique for optical proximity correction, an optimized mask function that has values other than those allowed for a particular mask type, such as 0 and 1 for a chrome-on-glass binary mask, evolves it to a solution restricted to these values or narrow intervals near them. The technique “regularizes” the solution by mixing in a new cost functional that encourages the mask to assume the desired values. The mixing in may be done over one or more steps or even “quasistatically,” in which the total cost functional and the mask is brought from pure goodness-of-fit to the printed layout for given conditions to pure manufacturability by keeping the total cost functional minimized step-by-step. A goal of this gradual mixing-in is to do thermodynamically optimal work on the mask function to bring it to manufacturable values.
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