Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14163583Application Date: 2014-01-24
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Publication No.: US09281076B2Publication Date: 2016-03-08
- Inventor: Naohisa Nishioka
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2008-281595 20081031
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C13/00 ; G11C7/22
Abstract:
A semiconductor device has an antifuse element and a measurement unit. The antifuse element stores information according to whether the antifuse element is in the broken or unbroken state. The measurement unit determines a resistance value related to the resistance value of the broken antifuse element.
Public/Granted literature
- US20140140160A1 Semiconductor Device Public/Granted day:2014-05-22
Information query
