A nonvolatile memory cell and a method for fabricating the same can secure stable operational reliability as well as reducing a cell size. The nonvolatile memory cell includes a drain region formed in a substrate, a source region formed in the substrate to be separated from the drain region, a floating gate formed over the substrate between the drain region and the source region, a halo region formed in the substrate in a direction that the drain region is formed, a dielectric layer formed on sidewalls of the floating gate, and a control gate formed over the dielectric layer to overlap with at least one sidewall of the floating gate.