发明授权
US09284452B2 Connection structure for photovoltaic power generation module 有权
光伏发电模块的连接结构

Connection structure for photovoltaic power generation module
摘要:
To provide a connection structure for a photovoltaic power generation module which is excellent in long-term heat resistance and which is excellent in low-temperature impact resistance even if the structure is reduced in wall thickness and size. There is provided a connection structure (1) for a photovoltaic power generation module which at least joins a photovoltaic power generation module to a cable for connecting to the photovoltaic power generation module, the connection structure for the photovoltaic power generation module comprising a thermoplastic resin composition having, as an index of long-term heat resistance, a relative thermal index (RTI) of tensile impact strength at a thickness of 1.5 mm of 115° C. or higher, and a Charpy impact strength at −40° C. of 6.5 kJ/m2 or more.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/042 ..单个光伏电池的光伏模块或者阵列(用于光伏模块的支撑结构入H02S20/00)
H01L31/048 ...模块的封装
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