Invention Grant
- Patent Title: Method and apparatus for characterizing thermal marginality in an integrated circuit
- Patent Title (中): 用于表征集成电路中热边缘度的方法和装置
-
Application No.: US13793880Application Date: 2013-03-11
-
Publication No.: US09285418B2Publication Date: 2016-03-15
- Inventor: Tapan J Chakraborty , Rajamani Sethuram , Ratibor Radojcic
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Chui-kiu Teresa Wong; Paul Holdaway
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; G01R31/28
Abstract:
Apparatus and methods are described herein for emulating the hot spot distribution of a functional test by applying vectors for structural test to an integrated circuit (IC). The affects of the hot spots can then be tested and characterized. The vectors may be generated on the IC, or may be fed to the IC via an external source.
Public/Granted literature
- US20130285687A1 METHOD AND APPARATUS FOR CHARACTERIZING THERMAL MARGINALITY IN AN INTEGRATED CIRCUIT Public/Granted day:2013-10-31
Information query
