- 专利标题: Pre-patterned hard mask for ultrafast lithographic imaging
-
申请号: US14642328申请日: 2015-03-09
-
公开(公告)号: US09285682B2公开(公告)日: 2016-03-15
- 发明人: Robert L. Bristol , Paul A. Nyhus , Charles H. Wallace
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Grossman, Tucker, Perreault & Pfleger, PLLC
- 主分类号: G03F7/095
- IPC分类号: G03F7/095 ; G03F7/00 ; G03F7/20 ; G03F7/004 ; G03F7/09 ; G03F7/38 ; H01L21/027 ; H01L21/033
摘要:
A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.
公开/授权文献
信息查询
IPC分类: