Invention Grant
US09286160B2 System and method for phase change memory with erase flag cells
有权
具有擦除标志单元的相变存储器的系统和方法
- Patent Title: System and method for phase change memory with erase flag cells
- Patent Title (中): 具有擦除标志单元的相变存储器的系统和方法
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Application No.: US14175843Application Date: 2014-02-07
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Publication No.: US09286160B2Publication Date: 2016-03-15
- Inventor: BharathManoj Manda , Abhishek Lal , Marco Pasotti , Marcella Carissimi
- Applicant: STMicroelectronics International NV , STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G06F11/10 ; G11C13/00

Abstract:
According to embodiments, a phase change memory (PCM) array includes a plurality of memory cells grouped into memory blocks. In the PCM array, each memory cell is a PCM cell. The PCM array also includes a plurality of erase flag cells. Each erase flag cell of the plurality of erase flag cells is associated with a memory block and indicates whether the memory block stores valid data or erased data.
Public/Granted literature
- US20150228338A1 System and Method for Phase Change Memory Public/Granted day:2015-08-13
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