Invention Grant
US09286971B1 Method and circuits for low latency initialization of static random access memory
有权
用于静态随机存取存储器低延迟初始化的方法和电路
- Patent Title: Method and circuits for low latency initialization of static random access memory
- Patent Title (中): 用于静态随机存取存储器低延迟初始化的方法和电路
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Application No.: US14482613Application Date: 2014-09-10
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Publication No.: US09286971B1Publication Date: 2016-03-15
- Inventor: Greg M. Hess , Ramesh Arvapalli , Andrew L. Arengo
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Erik A. Heter
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/00 ; G11C8/00 ; G11C11/419

Abstract:
A method and various circuit embodiments for low latency initialization of an SRAM are disclosed. In one embodiment, an IC includes an SRAM coupled to at least one functional circuit block. The SRAM includes a number of storage location arranged in rows and columns. The functional circuit block and the SRAM may be in different power domains. Upon initially powering up or a restoration of power, the functional circuit block may assert an initialization signal to begin an initialization process. Responsive to the initialization signal, level shifters may force assertion of various select/enable signals in a decoder associated with the SRAM. Thereafter, initialization data may be written to the SRAM. Writing initialization data may be performed on a row-by-row basis, with all columns in a row being written to substantially simultaneously.
Public/Granted literature
- US20160071574A1 METHOD AND CIRCUITS FOR LOW LATENCY INITIALIZATION OF STATIC RANDOM ACCESS MEMORY Public/Granted day:2016-03-10
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