Invention Grant
- Patent Title: Method for single fin cuts using selective ion implants
- Patent Title (中): 使用选择性离子注入的单片切割方法
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Application No.: US14676345Application Date: 2015-04-01
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Publication No.: US09287130B1Publication Date: 2016-03-15
- Inventor: Xiuyu Cai , Ajey Poovannummoottil Jacob , Ruilong Xie , Bruce Doris , Kangguo Cheng , Jason R. Cantone , Sylvie Mignot , David Moreau , Muthumanickam Sankarapandian , Pierre Morin , Su Chen Fan , Kisik Choi , Murat K. Akarvardar
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation , STMicroelectronics, Inc.
- Applicant Address: KY Grand Cayman US NY Armonk US TX Coppell
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee Address: KY Grand Cayman US NY Armonk US TX Coppell
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/308 ; H01L21/8234 ; H01L21/265 ; H01L21/266
Abstract:
A method includes forming a plurality of fin elements above a substrate. A mask is formed above the substrate. The mask has an opening defined above at least one selected fin element of the plurality of fin elements. An ion species is implanted into the at least one selected fin element through the opening to increase its etch characteristics relative to the other fin elements. The at least one selected fin element is removed selectively relative to the other fin elements.
Information query
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