Invention Grant
US09287140B2 Semiconductor packages having through electrodes and methods of fabricating the same 有权
具有通孔电极的半导体封装及其制造方法

Semiconductor packages having through electrodes and methods of fabricating the same
Abstract:
Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.
Information query
Patent Agency Ranking
0/0