Invention Grant
- Patent Title: Semiconductor packages having through electrodes and methods of fabricating the same
- Patent Title (中): 具有通孔电极的半导体封装及其制造方法
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Application No.: US14264123Application Date: 2014-04-29
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Publication No.: US09287140B2Publication Date: 2016-03-15
- Inventor: Hyunsoo Chung , Jongyeon Kim , In-Young Lee , Tae-Je Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0074572 20130627
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/48 ; H01L25/00 ; H01L21/02 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L25/03 ; H01L25/065 ; H01L21/768

Abstract:
Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.
Public/Granted literature
- US20150001685A1 SEMICONDUCTOR PACKAGES HAVING THROUGH ELECTRODES AND METHODS OF FABRICATING THE SAME Public/Granted day:2015-01-01
Information query
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