发明授权
- 专利标题： Through silicon via and process thereof
- 专利标题（中）： 通过硅通孔及其工艺
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申请号： US13900565申请日： 2013-05-23
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公开(公告)号： US09287173B2公开(公告)日： 2016-03-15
- 发明人: Chien-Li Kuo , Chun-Hung Chen , Ming-Tse Lin , Yung-Chang Lin
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
A through silicon via includes a substrate and a conductive plug. The substrate has a hole in a side. The conductive plug is disposed in the hole, and the conductive plug having an upper part protruding from the side, wherein the upper part has a top part and a bottom part, and the top part is finer than the bottom part. Moreover, a through silicon via process formed said through silicon via is also provided, which includes the following step. A hole is formed in a substrate from a side. A first conductive material is formed to cover the hole and the side. A patterned photoresist is formed to cover the side but exposing the hole. A second conductive material is formed on the exposed first conductive material. The patterned photoresist is removed. The first conductive material on the side is removed to form a conductive plug in the hole.
公开/授权文献
- US20140346645A1 THROUGH SILICON VIA AND PROCESS THEREOF 公开/授权日：2014-11-27
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