发明授权
- 专利标题： Nitride semiconductor element and nitride semiconductor wafer
- 专利标题（中）： 氮化物半导体元件和氮化物半导体晶片
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申请号： US14154829申请日： 2014-01-14
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公开(公告)号： US09287369B2公开(公告)日： 2016-03-15
- 发明人: Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-052342 20120308
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L33/00 ; H01L29/20 ; H01L21/02 ; H01L33/12 ; H01L33/32 ; B82Y20/00 ; H01L33/06 ; H01L29/778
摘要：
According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
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