发明授权
- 专利标题： Semiconductor device and method for forming the same
- 专利标题（中）： 半导体装置及其形成方法
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申请号： US14315170申请日： 2014-06-25
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公开(公告)号： US09287374B2公开(公告)日： 2016-03-15
- 发明人: Yu Jun Lee , Kyoung Chul Jang
- 申请人： SK HYNIX INC.
- 申请人地址： KR Icheon
- 专利权人： SK HYNIX INC.
- 当前专利权人： SK HYNIX INC.
- 当前专利权人地址： KR Icheon
- 优先权： KR10-2014-0035447 20140326
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/265 ; H01L29/423 ; H01L29/78 ; H01L27/105 ; H01L29/06 ; H01L21/311 ; H01L21/768 ; H01L27/108 ; H01L21/02 ; H01L21/8242
摘要：
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an active region, a device isolation film, a first liner nitride film disposed over a lower portion of a sidewall of the active region, and a second liner nitride film disposed over an upper portion of the sidewall of the active region and having a higher density of nitrogen than a density of nitrogen in the first liner nitride film.
公开/授权文献
- US20150279950A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 公开/授权日：2015-10-01
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