Invention Grant
US09287438B1 Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
有权
在具有污染物隔离的倒置变质多结太阳能电池中，在低温下形成欧姆接触的方法
- Patent Title: Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
- Patent Title (中): 在具有污染物隔离的倒置变质多结太阳能电池中，在低温下形成欧姆接触的方法
-
Application No.: US13754730Application Date: 2013-01-30
-
Publication No.: US09287438B1Publication Date: 2016-03-15
- Inventor: Tansen Varghese , Arthur Cornfeld , Daniel McGlynn
- Applicant: Tansen Varghese , Arthur Cornfeld , Daniel McGlynn
- Applicant Address: US NM Albuquerque
- Assignee: SolAero Technologies Corp.
- Current Assignee: SolAero Technologies Corp.
- Current Assignee Address: US NM Albuquerque
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0687
Abstract:
A method of manufacturing a solar cell assembly by providing a first substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell; mounting a supporting member on top of the sequence of layers using a temporary adhesive bonding material to form a processing assembly; removing the first substrate; and depositing a contact layer including germanium and palladium on the top surface of the solar cell at a relatively low temperature so that the temporary adhesive allows the processing assembly to remain attached.
Information query
IPC分类:
