Invention Grant
US09287765B2 Power system, power module therein and method for fabricating power module
有权
电源系统,电源模块及其制造电源模块的方法
- Patent Title: Power system, power module therein and method for fabricating power module
- Patent Title (中): 电源系统,电源模块及其制造电源模块的方法
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Application No.: US13845118Application Date: 2013-03-18
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Publication No.: US09287765B2Publication Date: 2016-03-15
- Inventor: Jian-Hong Zeng , Shou-Yu Hong , Xue-Tao Guo
- Applicant: DELTA ELECTRONICS, INC.
- Applicant Address: TW Taoyuan
- Assignee: DELTA ELECTRONICS, INC.
- Current Assignee: DELTA ELECTRONICS, INC.
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., Ltd.
- Priority: CN201010230158 20100715; CN201210509103 20121203
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H03L5/00 ; H02M1/14 ; H01L25/00 ; H02M7/00 ; H05K7/14 ; H01L23/00 ; H05K5/06 ; H01L23/473 ; H01L23/367 ; H02M7/5388

Abstract:
A power system, a power module therein and a method for fabricating power module are disclosed herein. The power module includes a first and a second common pins, and a first and a second bridge arms. The first and the second common pins are symmetrically disposed at one side of a substrate. The first bridge arm includes a first and a second semiconductor devices, and the first and the second semiconductor devices are connected to each other through the first common pin and disposed adjacently. The second bridge arm includes a third and a fourth semiconductor devices, and the third and the fourth semiconductor devices are connected to each other through the second common pin and disposed adjacently. The first and the third semiconductor devices are disposed symmetrically, and the second and the fourth semiconductor devices are disposed symmetrically.
Public/Granted literature
- US20130214842A1 POWER SYSTEM, POWER MODULE THEREIN AND METHOD FOR FABRICATING POWER MODULE Public/Granted day:2013-08-22
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