Invention Grant
- Patent Title: Positive and negative magnetostriction ultrahigh linear density sensor
- Patent Title (中): 正和负磁致伸缩超高线性密度传感器
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Application No.: US14610771Application Date: 2015-01-30
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Publication No.: US09293159B2Publication Date: 2016-03-22
- Inventor: Wonjoon Jung , Dimitar V. Dimitrov , Mark T. Kief
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/33 ; G11B5/31

Abstract:
A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.
Public/Granted literature
- US20150221326A1 ULTRAHIGH LINEAR DENSITY SENSOR Public/Granted day:2015-08-06
Information query
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