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US09293159B2 Positive and negative magnetostriction ultrahigh linear density sensor 有权
正和负磁致伸缩超高线性密度传感器

Positive and negative magnetostriction ultrahigh linear density sensor
Abstract:
A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.
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