Invention Grant
- Patent Title: Methods of forming semiconductor devices including an electrically-decoupled fin
- Patent Title (中): 形成包括电去耦翅片的半导体器件的方法
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Application No.: US14274406Application Date: 2014-05-09
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Publication No.: US09293324B2Publication Date: 2016-03-22
- Inventor: Steven Bentley , Ajey P. Jacob
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L29/20
Abstract:
Semiconductor devices including a fin and method of forming the semiconductor devices are provided herein. In an embodiment, a method of forming a semiconductor device includes forming a fin overlying a semiconductor substrate. The fin is formed by epitaxially-growing a semiconductor material over the semiconductor substrate, and the fin has a first portion that is proximal to the semiconductor substrate and a second portion that is spaced from the semiconductor substrate by the first portion. A gate structure is formed over the fin and the semiconductor substrate. The first portion of the fin is etched to form a gap between the second portion and the semiconductor substrate.
Public/Granted literature
- US20150325436A1 SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY-DECOUPLED FIN AND METHODS OF FORMING THE SAME Public/Granted day:2015-11-12
Information query
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