发明授权
- 专利标题： N metal for FinFET and methods of forming
- 专利标题（中）： FinFET的N金属和成型方法
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申请号： US14669786申请日： 2015-03-26
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公开(公告)号： US09293334B2公开(公告)日： 2016-03-22
- 发明人: Po-Chin Kuo , Chung-Liang Cheng , Hsien-Ming Lee , Weng Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L21/28 ; H01L29/78 ; H01L21/02
摘要：
An N work function metal for a gate stack of a field effect transistor (FinFET) and method of forming the same are provided. An embodiment FinFET includes a fin supported by a semiconductor substrate, the fin extending between a source and a drain and having a channel region, and a gate stack formed over the channel region of the fin, the gate stack including an N work function metal layer comprising an oxidation layer on opposing sides of a tantalum aluminide carbide (TaAlC) layer.
公开/授权文献
- US20150200100A1 N Metal for FinFET and Methods of Forming 公开/授权日：2015-07-16
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