发明授权
US09293375B2 Selectively grown self-aligned fins for deep isolation integration
有权
选择生长的自对准翅片进行深度隔离整合
- 专利标题： Selectively grown self-aligned fins for deep isolation integration
- 专利标题（中）： 选择生长的自对准翅片进行深度隔离整合
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申请号： US14260724申请日： 2014-04-24
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公开(公告)号： US09293375B2公开(公告)日： 2016-03-22
- 发明人: Kevin S. Petrarca , Stuart A. Sieg , Theodorus E. Standaert
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven J. Meyers
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/8234 ; H01L29/66 ; H01L21/762 ; H01L21/306 ; H01L21/3105 ; H01L21/308 ; H01L21/311 ; H01L21/02 ; H01L29/78 ; H01L21/033 ; H01L27/092
摘要：
A trench isolation structure is formed beneath a topmost surface of a semiconductor substrate. A mandrel structure having a bottommost surface that straddles a sidewall edge of the underlying trench isolation structure is then formed. Nitride spacers are formed on sidewalls of the mandrel structure and thereafter the mandrel structure is removed. A dielectric oxide material is then formed having a topmost surface that is coplanar with a topmost surface of each remaining nitride spacer. Each nitride spacer is removed and thereafter a semiconductor fin is epitaxially grown within a cavity in the dielectric oxide material which exposes a topmost surface of the semiconductor substrate.
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