A semiconductor structure is arranged on an integrated circuit, the integrated circuit includes a seal ring arranged at outer periphery of the integrated circuit, a metal ring arranged at an inner side of the seal ring and a power bus arranged at a side of the metal ring. The semiconductor structure includes a first P type electrode area, a second P type electrode area and a first N type electrode area. The first P type electrode area is formed at a position on a P well corresponding to the seal ring, and coupled to the seal ring. The second P type electrode area is formed at a position on the P well corresponding to the metal ring, and coupled to the metal ring. The first N type electrode area is formed at a position corresponding to the power bus, and coupled to the power bus.