Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14151269Application Date: 2014-01-09
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Publication No.: US09293427B2Publication Date: 2016-03-22
- Inventor: Seiichi Yoneda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-047460 20110304; JP2011-111004 20110518
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/8252 ; H01L27/06 ; H01L27/12

Abstract:
A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a resonance circuit with the antenna and the capacitor by being electrically connected to the antenna and the capacitor in parallel, a first field effect transistor controlling whether the passive element is electrically connected to the antenna and the capacitor in parallel or not, and a memory circuit. The memory circuit includes a second field effect transistor which includes an oxide semiconductor layer where a channel is formed and in which a data signal is input to one of a source and a drain. The gate voltage of the first field effect transistor is set depending on the voltage of the other of the source and the drain of the second field effect transistor.
Public/Granted literature
- US20140117353A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-05-01
Information query
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