Invention Grant
- Patent Title: Bipolar junction transistor having multi-sided base contact
- Patent Title (中): 具有多面基极接触的双极结晶体管
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Application No.: US14521605Application Date: 2014-10-23
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Publication No.: US09293454B2Publication Date: 2016-03-22
- Inventor: Jin Cai , Tak H. Ning
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent George Blasiak
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L29/423 ; H01L29/66 ; H01L29/735 ; H01L21/8249 ; H01L29/10 ; H01L29/45
Abstract:
A Bipolar Junction Transistor with an intrinsic base, wherein the intrinsic base includes a top surface and two side walls orthogonal to the top surface, and a base contact electrically coupled to the side walls of the intrinsic base. In one embodiment an apparatus can include a plurality of Bipolar Junction Transistors, and a base contact electrically coupled to the side walls of the intrinsic bases of each BJT.
Public/Granted literature
- US20150041957A1 BIPOLAR JUNCTION TRANSISTOR HAVING MULTI-SIDED BASE CONTACT Public/Granted day:2015-02-12
Information query
IPC分类:
