Integrated circuits having silicide contacts with reduced contact resistance and methods for fabricating integrated circuits having silicide contacts with reduced contact resistance are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having selected source/drain regions and non-selected source/drain regions. The method forms a contact resistance modulation material over the selected source/drain regions. Further, the method forms a metal layer over the selected and non-selected source/drain regions. The method includes annealing the metal layer to form silicide contacts on the selected and non-selected source/drain regions.