发明授权
- 专利标题： Monolithic bi-directional current conducting device and method of making the same
- 专利标题（中）： 单片双向导流装置及其制造方法
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申请号： US14483851申请日： 2014-09-11
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公开(公告)号： US09293465B1公开(公告)日： 2016-03-22
- 发明人: John V. Veliadis
- 申请人： John V. Veliadis
- 申请人地址： US VA Falls Church
- 专利权人： Northrop Grumman Systems Corporation
- 当前专利权人： Northrop Grumman Systems Corporation
- 当前专利权人地址： US VA Falls Church
- 代理机构： Tarolli, Sundheim, Covell & Tummino LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L27/098 ; H01L21/8232 ; H01L29/808 ; H01L29/06
摘要：
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.
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