Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing the same
- Patent Title (中): 碳化硅半导体器件及其制造方法
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Application No.: US13658672Application Date: 2012-10-23
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Publication No.: US09293549B2Publication Date: 2016-03-22
- Inventor: Takeyoshi Masuda , Tomoaki Hatayama
- Applicant: Sumitomo Electric Industries, Ltd. , NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: JP Osaka-shi JP Ikoma-shi
- Assignee: Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- Current Assignee: Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- Current Assignee Address: JP Osaka-shi JP Ikoma-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; F. Brock Riggs
- Priority: JP2011-253556 20111121
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L21/3065 ; H01L29/04 ; H01L29/16
Abstract:
A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.
Public/Granted literature
- US20130126904A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-23
Information query
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