发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13364416申请日： 2012-02-02
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公开(公告)号： US09293575B2公开(公告)日： 2016-03-22
- 发明人: Yuki Nakano
- 申请人： Yuki Nakano
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2008-330317 20081225; JP2008-334480 20081226; JP2009-293361 20091224
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/45 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/417 ; H01L29/423
摘要：
The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer.
公开/授权文献
- US20120126249A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-05-24
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