发明授权
- 专利标题： Tunnel field effect transistor (TFET) with lateral oxidation
- 专利标题（中）： 隧道场效应晶体管（TFET）具有侧向氧化
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申请号： US13274001申请日： 2011-10-14
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公开(公告)号： US09293591B2公开(公告)日： 2016-03-22
- 发明人: Jack C. Lee , Han Zhao
- 申请人： Jack C. Lee , Han Zhao
- 申请人地址： US TX Austin
- 专利权人： THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM
- 当前专利权人： THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM
- 当前专利权人地址： US TX Austin
- 代理机构： Moritt Hock & Hamroff LLP
- 代理商 Steven S. Rubin, Esq.
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L29/786 ; H01L29/06 ; H01L29/08
摘要：
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.
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