Invention Grant
US09293645B2 Deposition apparatus, method thereof and method for forming quantum-dot layer using the same
有权
沉积装置及其方法和使用该方法形成量子点层的方法
- Patent Title: Deposition apparatus, method thereof and method for forming quantum-dot layer using the same
- Patent Title (中): 沉积装置及其方法和使用该方法形成量子点层的方法
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Application No.: US14040870Application Date: 2013-09-30
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Publication No.: US09293645B2Publication Date: 2016-03-22
- Inventor: Dong-Chan Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0057625 20130522
- Main IPC: C23C14/56
- IPC: C23C14/56 ; H01L33/06 ; C23C14/02
Abstract:
A deposition apparatus includes a first nozzle configured to spray a first deposition material toward a substrate and a second nozzle configured to spray a second deposition material, a first deposition source configured to supply the first deposition material to the first nozzle and a second deposition source configured to supply the second deposition material to the second nozzle. The deposition apparatus further includes a barrier member disposed between the first nozzle and the second nozzle and is configured to block the first deposition material evaporated through the first nozzle from being mixed with the second deposition material evaporated through the second nozzle and a vacuum chamber configured to surround the first and second nozzles, the first and second deposition sources and the barrier member.
Public/Granted literature
- US20140349430A1 DEPOSITION APPARATUS, METHOD THEREOF AND METHOD FOR FORMING QUANTUM-DOT LAYER USING THE SAME Public/Granted day:2014-11-27
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