The present invention relates to a semiconductive polymer composition comprising: —an ethylene copolymer (A) comprising methyl(meth)acrylate co-monomer units, wherein the ethylene copolymer (A) has a melt temperature of 80° C. or below, and—carbon black, wherein the ethylene copolymer (A) is produced in a autoclave high pressure reactor or in a multi-feed tubular reactor; to a semiconductive polymer composition comprising—an ethylene copolymer (A) comprising methyl(meth)acrylate, comonomer units; and—carbon black, wherein ethylene copolymer (A) is characterized in that the fraction obtained in the first fractionation step (fraction 1) in the fractionation method of ethylene copolymer (A) as described herein, is present in an amount of not more than 40 wt. % based on the total amount of the ethylene copolymer (A); and to a cable comprising a semiconductive layer comprising the semiconductive polymer composition and to the use of the semiconductive polymer composition in the preparation of a semiconductive layer of a power cable.