发明授权
- 专利标题： Padding for multi-channel memory
- 专利标题（中）： 多通道内存填充
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申请号： US13491452申请日： 2012-06-07
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公开(公告)号： US09299124B2公开(公告)日： 2016-03-29
- 发明人: Lin Chen , Piyush Agarwal , Long Chen , Lingjun Chen
- 申请人： Lin Chen , Piyush Agarwal , Long Chen , Lingjun Chen
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Shumaker & Sieffert, P.A.
- 主分类号： G06T1/60
- IPC分类号： G06T1/60
摘要：
Techniques described in the disclosure are generally related to reserving padding bytes in system memory when storing data in the system memory. The reserving of padding bytes may allow a memory interface to efficiently utilize the channels to the system memory when storing or subsequently retrieving the data.
公开/授权文献
- US20130328889A1 PADDING FOR MULTI-CHANNEL MEMORY 公开/授权日：2013-12-12