Invention Grant
- Patent Title: Padding for multi-channel memory
- Patent Title (中): 多通道内存填充
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Application No.: US13491452Application Date: 2012-06-07
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Publication No.: US09299124B2Publication Date: 2016-03-29
- Inventor: Lin Chen , Piyush Agarwal , Long Chen , Lingjun Chen
- Applicant: Lin Chen , Piyush Agarwal , Long Chen , Lingjun Chen
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G06T1/60
- IPC: G06T1/60
Abstract:
Techniques described in the disclosure are generally related to reserving padding bytes in system memory when storing data in the system memory. The reserving of padding bytes may allow a memory interface to efficiently utilize the channels to the system memory when storing or subsequently retrieving the data.
Public/Granted literature
- US20130328889A1 PADDING FOR MULTI-CHANNEL MEMORY Public/Granted day:2013-12-12
Information query
