发明授权
US09299474B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
有权
用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
- 专利标题： Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
- 专利标题（中）： 用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
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申请号： US13812277申请日： 2011-07-28
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公开(公告)号： US09299474B2公开(公告)日： 2016-03-29
- 发明人: Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
- 申请人： Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
- 申请人地址： KR Yongin
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR Yongin
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P
- 优先权： JP2010-172868 20100730; JP2011-008323 20110118
- 国际申请： PCT/JP2011/067332 WO 20110728
- 国际公布： WO2012/014999 WO 20120202
- 主分类号： H01B1/08
- IPC分类号： H01B1/08 ; H01L29/24 ; C23C14/08 ; H01L21/02 ; H01L29/786
摘要：
There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
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