Invention Grant
- Patent Title: Method for forming a strained semiconductor structure
- Patent Title (中): 形成应变半导体结构的方法
-
Application No.: US14313928Application Date: 2014-06-24
-
Publication No.: US09299563B2Publication Date: 2016-03-29
- Inventor: Seung Hun Lee , Liesbeth Witters , Roger Loo
- Applicant: IMEC VZW , Samsung Electronics Co. Ltd.
- Applicant Address: BE Leuven KR Suwon-si
- Assignee: IMEC VZW,Samsung Electronics Co. Ltd.
- Current Assignee: IMEC VZW,Samsung Electronics Co. Ltd.
- Current Assignee Address: BE Leuven KR Suwon-si
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP13173380 20130624
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L29/10 ; H01L21/3065

Abstract:
The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer.
Public/Granted literature
- US20140377936A1 Method for Forming a Strained Semiconductor Structure Public/Granted day:2014-12-25
Information query
IPC分类: