Invention Grant
- Patent Title: Method for cutting substrate
- Patent Title (中): 切割基材的方法
-
Application No.: US14324825Application Date: 2014-07-07
-
Publication No.: US09299613B2Publication Date: 2016-03-29
- Inventor: Il Young Jeong , Tae Yong Kim , Cheol Lae Roh , Je Kil Ryu , Jeong Hun Woo , Gyoo Wan Han , Ki Su Han , Tae Hyoung Cho , Jong Nam Moon
- Applicant: Samsung Display Co., Ltd. , Philoptics Co., Ltd.
- Applicant Address: KR Yongin-si KR Suwon-si
- Assignee: Samsung Display Co., Ltd.,Philoptics Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.,Philoptics Co., Ltd.
- Current Assignee Address: KR Yongin-si KR Suwon-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2013-0125422 20131021
- Main IPC: H01L21/78
- IPC: H01L21/78 ; C03B33/09 ; C03B33/02 ; C03B33/07 ; C03B33/08 ; B23K26/06 ; B23K26/38

Abstract:
A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.
Public/Granted literature
- US20150108089A1 METHOD FOR CUTTING SUBSTRATE Public/Granted day:2015-04-23
Information query
IPC分类: