Invention Grant
- Patent Title: Front-to-back bonding with through-substrate via (TSV)
- Patent Title (中): 通过(TSV)的贯通基板进行前后连接
-
Application No.: US13943157Application Date: 2013-07-16
-
Publication No.: US09299640B2Publication Date: 2016-03-29
- Inventor: Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L27/06 ; H01L23/00 ; H01L25/065 ; H01L25/00

Abstract:
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer includes a first transistor formed in a front-side of the first semiconductor wafer, and the second semiconductor wafer includes a second transistor formed in a front-side of the second semiconductor wafer. A backside of the second semiconductor wafer is bonded to the front-side of the first semiconductor wafer. The semiconductor device structure further includes an interconnect structure formed over the front-side of the second semiconductor wafer, and at least one first through substrate via (TSV) directly contacts a conductive feature of the first semiconductor wafer and the interconnect structure.
Public/Granted literature
- US20150021784A1 FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV) Public/Granted day:2015-01-22
Information query
IPC分类: