Invention Grant
- Patent Title: Ruthenium interconnect with high aspect ratio and method of fabrication thereof
- Patent Title (中): 具有高纵横比的钌互连及其制造方法
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Application No.: US12286149Application Date: 2008-09-29
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Publication No.: US09299643B2Publication Date: 2016-03-29
- Inventor: Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
- Applicant: Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/485 ; H01L21/768 ; H01L23/532 ; H01L27/105 ; H01L27/115

Abstract:
An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.
Public/Granted literature
- US20100078815A1 Ruthenium interconnect with high aspect ratio and method of fabrication thereof Public/Granted day:2010-04-01
Information query
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