Invention Grant
US09299658B2 Semiconductor device with self-protecting fuse and method of fabricating the same
有权
具有自保险保险丝的半导体器件及其制造方法
- Patent Title: Semiconductor device with self-protecting fuse and method of fabricating the same
- Patent Title (中): 具有自保险保险丝的半导体器件及其制造方法
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Application No.: US14717995Application Date: 2015-05-20
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Publication No.: US09299658B2Publication Date: 2016-03-29
- Inventor: Chen-Chung Lai , Kang-Min Kuo , Yen-Ming Peng , Gwo-Chyuan Kuoh , Han-Wei Yang , Yi-Ruei Lin , Chin-Chia Chang , Ying-Chieh Liao , Che-Chia Hsu , Bor-Zen Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L23/525 ; H01L21/306 ; H01L21/3213 ; H01L29/167
Abstract:
A semiconductor device with the metal fuse and a fabricating method thereof are provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.
Public/Granted literature
- US20150255394A1 SEMICONDUCTOR DEVICE WITH SELF-PROTECTING FUSE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-09-10
Information query
IPC分类:
